发明名称 Self powering application specific integrated circuit
摘要 A system and method for fabricating a self-powering integrated circuit chip having an integrated circuit, which may be a MEMS or CMOS device or the like and a thin film photovoltaic cell stack overlayed thereupon or on the opposite side of the substrate on which the IC is manufactured upon.
申请公布号 US8957488(B2) 申请公布日期 2015.02.17
申请号 US201113053610 申请日期 2011.03.22
申请人 Sol Chip Ltd. 发明人 Keysar Shani;Navon Ofer
分类号 H01L27/14;H01L25/16;H01L31/0392 主分类号 H01L27/14
代理机构 M&B IP Analysts, LLC 代理人 M&B IP Analysts, LLC
主权项 1. A self-powering application-specific integrated circuit (ASIC), comprising: an integrated circuit (IC) having at least one integrated electrical circuit and a passivation layer at least partially coating the IC and at least a metal pad covered at least in part by the passivation layer, wherein the passivation layer includes openings allowing electrical connection between the at least metal pad and a first electrical layer of the IC, wherein the IC is fabricated on a semiconductor substrate; and at least one power cell comprising at least one deposited photovoltaic (PV) cell, the at least one power cell overlaying the passivation layer of the IC, wherein an upper electrode of the at least one power cell connects to the at least metal pad via an opening formed in a bottom surface of the passivation layer, and wherein the IC and the at least one power cell form a monolithic device such that the at least one power cell is structured to self-power the at least one electric circuit.
地址 Haifa IL