| 发明名称 | Substrate processing method and substrate processing apparatus | ||
| 摘要 | A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times. | ||
| 申请公布号 | US8956546(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201113813663 | 申请日期 | 2011.08.02 |
| 申请人 | Tokyo Electron Limited | 发明人 | Ugajin Hajime;Tozawa Shigeki |
| 分类号 | B44C1/22;H01L21/302;H01L21/311;H01L21/67;H01L21/677;H01L21/762;H01L27/115;H01L29/66 | 主分类号 | B44C1/22 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber, the method comprising: a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber; and a second step following the first step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step, wherein the first step and the second step are sequentially repeated two or more times. | ||
| 地址 | Tokyo JP | ||