Photoresist and patterning process

摘要

A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

主权项

1. A method for forming a pattern, the method comprising:
providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator, a photobase generator having a diffusion length ranging from about 10 nm2/sec to about 30 nm2/sec; prior to forming the second material layer, determining whether a reaction mechanism of the photobase generator is loading control or diffusion control, the determination being based on a conversion efficiency of the photobase generator; tuning characteristics of the second material layer according to the determination to provide diffusion control or loading control so that the photobase generator exhibits a higher diffusion mobility than the photoacid generator by including a loading amount of the photobase generator that is from about 0.1% to about 30% by weight of the photoacid generator; and exposing one or more portions of the second material layer.