Semiconductor device and manufacturing method of semiconductor device

摘要

According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.

主权项

1. A semiconductor device comprising:
an assembly substrate; a semiconductor chip joined to the assembly substrate through a jointing layer that is between the assembly substrate and the semiconductor chip the jointing layer including an alloy comprising: at least one of Sn, Zn and In, and at least one of Cu, Ni, Ag, Cr, Zr, Ti and V; and a soft metal layer between the jointing layer and the semiconductor chip and including any metal selected from Cu, Al, Zn and Ag, wherein the jointing layer includes at least two phases of the alloy.