Method for producing group III nitride semiconductor light-emitting device

摘要

The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process and the latter process where the supply amount of the Mg dopant gas is different. The supply amount of the Mg dopant gas in the latter process is half or less than that in the former process. The thickness of a first p-cladding layer formed in the former process is 60% or less than that of the p-cladding layer, and 160 Å or less.

主权项

1. A method for producing a Group III nitride semiconductor light-emitting device including a p-cladding layer comprising a Group III nitride semiconductor containing Al on a light-emitting layer,
wherein the p-cladding layer is formed in a former process where a first p-cladding layer is formed by metalorganic chemical vapor deposition (MOCVD) on the light-emitting layer, and in a latter process where a second p-cladding layer is formed by MOCVD on the first cladding layer, and wherein a supply amount of a Mg dopant gas in the latter process is half or less than a supply amount of Mg dopant gas in the former process such that a Mg concentration distribution is obtained in which after the Mg concentration steeply increases from a vicinity of an interface between the light-emitting layer and the p-cladding layer toward a p-contact layer, the Mg concentration is kept almost constant, and then the Mg concentration steeply decreases in a vicinity of the interface between the p-cladding layer and the p-contact layer.