| 摘要 |
PROBLEM TO BE SOLVED: To construct non-volatile re-programmable logic using spin transfer torque magnetoresistive random access memory.SOLUTION: Re-programmable gate logic 400 comprises a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, where the circuits are re-configurable to implement or change selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal A, B. An evaluation switch 418 in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal 420 based on the programmed states of the memory circuits. A sensor 430 is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. |
