p-TYPE ZnO-BASED SEMICONDUCTOR LAYER MANUFACTURING METHOD AND ZnO-BASED SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-type ZnO-based semiconductor layer having a high acceptor concentration.SOLUTION: A p-type ZnO-based semiconductor layer manufacturing method comprises: (a) forming an n-type ZnO-based semiconductor single crystal structure including a group IB element which is Cu or/and Ag and one and more group IIIB elements selected from a group consisting of B, Ga, Al and In; (b) performing first annealing on the n-type ZnO-based semiconductor single crystal structure under reduced pressure; and (c) performing second annealing on the n-type ZnO-based semiconductor singe crystal structure having been subjected to first annealing in an oxidant-containing atmosphere to form a p-type ZnO-based semiconductor layer in which the group IB element and the group IIIB element are co-doped.