| 摘要 |
<p>The present invention relates to an atomic layer thin film deposition device which includes: a chamber; a susceptor which is arranged in the chamber and to which a plurality of substrates are seated; a gas injector on the top of the susceptor to partition off the susceptor into arbitrary spaces and to supply source gas, reaction gas, and purge gas to a plurality of the substrates in each partitioned space; and a vent on the top of the susceptor to be adjacent to the gas injector to guide the source gas, the reaction gas, and the purge gas to flow to the top. By this, deposition efficiency is significantly improved as contact between the source gas and reaction gas which are not deposited on the substrates is prevented and the source gas and the reaction gas are promptly discharged.</p> |
