| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor structure and a manufacturing method of the same, which utilizes a (n0-n1) (where n is an integer) plane including a (20-21) plane as a principal surface in a simple method.SOLUTION: A nitride semiconductor structure comprises: a sapphire substrate including a principal surface having an off angle &thetas; inclined from an m axis toward an a axis, and a normal line perpendicular to a c axis; and a nitride semiconductor layer structure including a nitride semiconductor layer which lies on the principal surface of the sapphire substrate and utilizes a semipolar face as a principal surface. The principal surface of the nitride semiconductor layer has a normal line perpendicular to the a axis of the nitride semiconductor layer, and an off angle Φ inclined from the m axis toward the c axis. The off angle &thetas; of the sapphire substrate and the off angle Φ of the nitride semiconductor layer satisfy a relation represented by the following formula (1) and the off angle &thetas; of the sapphire substrate is not less than 5 degrees and not more than 25 degrees: Φ=0.78x&thetas; (1). |
