| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser manufacturing method which can increase a carrier concentration of a clad layer.SOLUTION: A semiconductor laser manufacturing method comprises: a process of epitaxially growing a clad layer 14, an active layer 16 and a clad layer 18 sequentially on a substrate 10 which is composed of InP or GaAs and has a surface index of (100); a process of forming a plurality of growth start surfaces each having a surface index larger than (100) on a top face of the clad layer 18; and a process of epitaxially growing a zinc-containing clad layer 24 on the growth start surface of the clad layer 18.</p> |
