发明名称 |
SEMICONDUCTOR STRUCTURE |
摘要 |
A semiconductor structure is provided. The semiconductor structure includes an interposer structure. The interposer structure includes an interposer substrate, a ground, through vias, a dielectric layer, and an inductor. The through vias are formed in the interposer substrate and electrically connected to the ground. The dielectric layer is on the interposer substrate. The inductor is on the dielectric layer. |
申请公布号 |
US2015041952(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201313964184 |
申请日期 |
2013.08.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chen Chun-Hung;Lin Ming-Tse;Kuo Chien-Li;Wu Kuei-Sheng |
分类号 |
H01L23/60;H01L49/02 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure, comprising:
an interposer structure comprising:
an interposer substrate;a ground;through vias formed in the interposer substrate and electrically connected to the ground;a dielectric layer on the interposer substrate; andan inductor on the dielectric layer. |
地址 |
Hsinchu TW |