Shallow Trench Isolation Area Having Buried Capacitor

摘要

A semiconductor chip includes a substrate including a surface, an active transistor region and a substrate contact region formed on the substrate, a shallow trench isolation (STI) area formed in the surface and disposed at least partially between the active transistor region and the substrate contact region, and at least one capacitor at least partially buried in the STI area.

主权项

1. A semiconductor chip comprising:
a substrate comprising a surface; an active transistor region and a substrate contact region disposed at the substrate; a shallow trench isolation (STI) area disposed at the surface and disposed at least partially between the active transistor region and the substrate contact region; and at least one capacitor at least partially buried in the STI area, wherein the at least one capacitor comprises a plurality of capacitors arranged such that the capacitors are completely buried within the STI area, plates of the capacitors are disposed in a direction perpendicular to the surface of the substrate, and the capacitors are connected to each other in a line-to-line configuration.