METHOD AND SYSTEM FOR PROVIDING MAGNETIC MEMORIES SWITCHABLE USING SPIN ACCUMULATION AND SELECTABLE USING MAGNETOELECTRIC DEVICES

摘要

A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).

主权项

1. A magnetic memory comprising:
a plurality of magnetic junctions, each of the plurality of magnetic junctions including a reference layer, a nonmagnetic spacer layer and a free layer, the free layer being magnetic, the nonmagnetic spacer residing between the free and the reference layer; and at least one semi-spin valve (SSV) line adjacent to the plurality of magnetic junctions, the at least one SSV line including a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the plurality of magnetic junctions, the SSV line configured to exert a spin accumulation induced torque on at least a portion of the plurality of magnetic junctions due to an accumulation of spin polarized current carriers from a current, the current passing through the at least one SSV line in a current direction, the current direction being substantially perpendicular to a direction between the at least one SSV line and the a magnetic junction of the plurality of magnetic junctions closest to at least a portion of the ferromagnetic layer, the free layer being configured to be written using at least the spin accumulation induced torque