| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a resistor with a small occupied area. <P>SOLUTION: A conductive polycrystalline silicon 5 is formed on a field oxide film on a semiconductor substrate, and then contact holes reaching the polycrystalline silicon 5 are formed in an insulating film covering over the polycrystalline silicon 5. In the contact holes, a tungsten sidewall 9, a silicon oxide film sidewall 10, and a resistor 11 are formed. The resistor 11 that is vertically long is formed by disposing an electrode 12 on the resistor. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
