HIGH-WITHSTAND-VOLTAGE SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR

摘要

A p+ layer (3) is selectively formed on a surface of an n- type SiC layer (2) above an n+ type SiC semiconductor substrate (1), and a p base layer (4) is formed above the n- type SiC layer (2) and the p+ layer (3). A p+ contact layer (5) is selectively formed in a surface layer of the p base layer (4). An n inversion layer (6) is formed so as to pass through the p base layer (4) from a surface, and reach the n- type SiC layer (2). A gate electrode layer (8) is provided above an exposed surface section of the p base layer (4), with a gate insulation film (9) provided therebetween, said exposed surface section being sandwiched between the p+ contact layer (5) and the n inversion layer (6). A source electrode (10) is provided which is in contact with the p+ contact layer (5) and the p base layer (4). A drain electrode (11) is provided to a rear surface. A p+ layer (31) is formed such that a portion of the p+ layer (3) is coupled by a coupling part in a drain-electrode (11) side area of the n inversion layer (6). Furthermore, the p+ layer (31) is formed so as to be in contact with a drain-electrode (11) side portion of the p+ layer (3).