| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory device that stabilizes operation of a memory cell array having a three-dimensional structure and improves the characteristics and reliability of the memory cell array.SOLUTION: A non-volatile memory device includes: a plurality of stacked electrodes parallely disposed in a first direction in a plane parallel to a ground layer and extending in a second direction orthogonal to the first direction; a plurality of semiconductor layers penetrating through each of the plurality of stacked electrodes in the first direction and a third direction orthogonal to the second direction; and memory films provided between each of the plurality of semiconductor layers and the stacked electrodes. The non-volatile memory device further includes: insulators provided between the adjacent stacked electrodes; and connection portions electrically connecting one of the plurality of semiconductor layers penetrating through one of the adjacent stacked electrodes and one of the plurality of semiconductor layers penetrating through the other of the adjacent stacked electrodes. Ends of the semiconductor layers on the ground layer side are located between the connection portions and the ground layer. |
