TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND P-TYPE TFETS

摘要

Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

主权项

1. A tunneling field effect transistor (TFET), comprising:
a homojunction active region disposed above a relaxed substrate, the homojunction active region comprising:
a biaxially tensile strained Ge or Ge1-ySny body having an undoped channel region therein; anddoped source and drain regions disposed in the biaxially tensile strained Ge or Ge1-ySny body, on either side of the channel region; and a gate stack disposed on the channel region, between the source and drain regions, the gate stack comprising a gate dielectric portion and gate electrode portion.