METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH

摘要

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

主权项

1. A method for cleaning a surface of a substrate, comprising:
removing contaminants from the surface of the substrate, wherein the contaminants are removed by a reducing process; then cleaning the surface of the substrate by use of a plasma etch process, wherein at least one process gas is used during the plasma etch process; and then forming an epitaxial layer on the surface of the substrate.