| 发明名称 |
P TYPE MOSFET AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Provided are P type MOSFETs and methods for manufacturing the same. The method may include forming source/drain regions in a semiconductor substrate; forming an interfacial oxide layer on the semiconductor substrate; forming a high K gate dielectric layer on the interfacial oxide layer; forming a first metal gate layer on the high K gate dielectric layer; implanting dopants into the first metal gate layer through conformal doping; and performing annealing to change an effective work function of a gate stack including the first metal gate layer, the high K gate dielectric, and the interfacial oxide layer. |
| 申请公布号 |
US2015041925(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201214385101 |
申请日期 |
2012.12.07 |
| 申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Zhu Huilong;Xu Qiuxia;Zhang Yanbo;Yang Hong |
| 分类号 |
H01L21/28;H01L29/78;H01L29/49;H01L29/51;H01L29/66;H01L21/266 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for manufacturing a P type MOSFET, comprising:
forming source/drain regions in a semiconductor substrate; forming an interfacial oxide layer on the semiconductor substrate; forming a high K gate dielectric layer on the interfacial oxide layer; forming a first metal gate layer on the high K gate dielectric layer; implanting dopants into the first metal gate layer through conformal doping; and performing annealing to change an effective work function of a gate stack including the first metal gate layer, the high K gate dielectric, and the interfacial oxide layer. |
| 地址 |
Beijing CN |
