| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device may include a string including at least one drain select transistor, a plurality of first memory cells, a first connection element, a plurality of second memory cells, a second connection element, a plurality of third memory cells, and at least one source select transistor, wherein the at least one drain select transistor, the plurality of first memory cells, the plurality of second memory cells, the plurality of third memory cells, and the at least one source select transistor connected serially via the first connection element and the second connection element. |
| 申请公布号 |
US2015041901(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201314096861 |
申请日期 |
2013.12.04 |
| 申请人 |
SK hynix Inc. |
发明人 |
SON Chang Man;LEE Go Hyun;OH Sung Lae |
| 分类号 |
H01L27/105 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a string including:
at least one drain select transistor,a plurality of first memory cells,a first connection element,a plurality of second memory cells,a second connection element,a plurality of third memory cells, andat least one source select transistor,wherein the at least one drain select transistor, the plurality of first memory cells, the plurality of second memory cells, the plurality of third memory cells, and the at least one source select transistor are connected serially via the first connection element and the second connection element. |
| 地址 |
Gyeonggi-do KR |
