| 摘要 |
Disclosed are: a thin-film photoelectric conversion device, in which detachment between layers that constitute the thin-film photoelectric conversion device can be suppressed and having little residual stock removals in separation grooves; and a process for producing the device. The thin-film photoelectric conversion device comprises a substrate having a transparent electrode layer attached thereto and at least one photoelectric conversion unit and a back electrode layer both formed on the substrate, wherein the substrate comprises a transparent base member and a transparent underlying layer and a transparent electrode layer both stacked in this order on one main surface of the base member. The transparent electrode layer, the photoelectric conversion unit and the back electrode layer are separated from one another by a plurality of separation grooves so as to form a plurality of photoelectric conversion cells, and the plurality of photoelectric conversion cells are electrically connected to each other through a plurality of connection grooves. It is preferred that the content ratio of magnesium oxide in the transparent base member be from 0.2 to 2.0 wt%. It is also preferred that the transparent underlying layer comprise transparent insulating fine particles and transparent binder and the transparent electrode layer comprise zinc oxide that is deposited by a low-pressure CVD method. |
