发明名称 |
METHOD FOR MAPPING OXYGEN CONCENTRATION |
摘要 |
<p>A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.</p> |
申请公布号 |
EP2612136(B1) |
申请公布日期 |
2015.02.11 |
申请号 |
EP20110758493 |
申请日期 |
2011.08.30 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
VEIRMAN, JORDI;DUBOIS, SÉBASTIEN;ENJALBERT, NICOLAS |
分类号 |
G01N27/04 |
主分类号 |
G01N27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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