发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a laser element by using nitride semiconductor for realizing laser oscillation by first forming an adequate optical resonance face as a reflective mirror. SOLUTION: A nitride semiconductor (InXAlYGa1-X-YN, 0<=X, 0<=Y, X+Y<=1) is laminated on a substrate in the laser element, and the edge face of the nitride semiconductor, which is etched almost vertically to the substrate, functions as an optical resonance face for the laser element. A dielectric multilayer film is formed on at least one of optical resonance faces, so that reflectivity of the optical resonance face is enhanced, while the laser oscillation is carried out.
申请公布号 JP2002171024(A) 申请公布日期 2002.06.14
申请号 JP20010361772 申请日期 2001.11.27
申请人 NICHIA CHEM IND LTD 发明人 SENOO MASAYUKI;YAMADA TAKAO;NAKAMURA SHUJI
分类号 H01S5/028;H01S5/02;H01S5/323;(IPC1-7):H01S5/028 主分类号 H01S5/028
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