Method for controlling concentration of donor in GA₂O₃—based single crystal

摘要

A method for controlling the concentration of a donor in a Ga2O3-based single crystal includes: a step in which a Group IV element is implanted as a donor impurity in a Ga2O3-based single crystal by ion implantation process to form, in the Ga2O3-based single crystal, a donor impurity implantation region that has a higher concentration of the Group IV element than the region in which the Group IV element has not been implanted; and a step in which annealing at 800 C or higher is conducted to activate the Group IV element present in the donor impurity implantation region and thereby form a high-donor-concentration region. Thus, the donor concentration in the Ga2O3-based single crystal is controlled.

主权项

1. A method for controlling a concentration of a donor in a Ga2O3-based single crystal, comprising:
introducing a Group IV element as a donor impurity into a Ga2O3-based single crystal by ion implantation process so as to form a donor impurity implantation region having a higher concentration of the Group IV element than a region without implanting the Group IV element in the Ga2O3-based single crystal; and activating the Group IV element present in the donor impurity implantation region by annealing treatment at a temperature not less than 800° C. to form a high-donor-concentration region.