Method of detecting defects in a semiconductor device and semiconductor device using the same

摘要

A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.

主权项

1. A method of detecting a defect of a semiconductor device, the method comprising:
forming test patterns and unit cell patterns in a test region and a cell array region of a substrate, respectively; obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region; obtaining cell data by irradiating the electron beam into the cell array region; and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data, wherein forming the test patterns and the unit cell patterns on the substrate includes: forming lower conductive portions on the test region and the cell array region of the substrate; and forming contact holes exposing the lower conductive portions in the test region and the cell array region, wherein forming the test patterns includes forming same circuits as in the unit cell patterns, except for the contact holes as in the unit cell patterns.