Semiconductor device and method for manufacturing the same

摘要

A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; an electrode pad disposed on the semiconductor substrate; a first insulating layer disposed on the electrode pad and the semiconductor substrate; the first insulating layer having a first opening directly over the electrode pad; first wiring disposed on the first insulating layer, the first wiring being directly coupled to the electrode pad through a conductor via formed in the first opening; a second wiring disposed on the first insulating layer, the second wiring is disposed perpendicularly to the first wiring; a second insulating layer disposed on the first wiring, the second wiring and the first insulating layer, the second insulating layer having a second opening overlying a portion of the first wiring; a metal film disposed on the first wiring in the second opening and on a part of the second insulating layer; and a solder bump overlying the metal film, wherein the second wire passes through under the metal film.