Method for manufacturing semiconductor device

摘要

To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a base insulating layer over an insulating surface; performing a first heat treatment after forming the base insulating layer; performing an oxygen doping treatment by at least one of an ion implantation method, an ion doping method, and a plasma immersion ion implantation method after the first heat treatment; forming an oxide semiconductor layer over the base insulating layer after the oxygen doping treatment; forming a gate insulating layer over the oxide semiconductor layer; and forming a gate electrode layer over the gate insulating layer.