Light emitting device comprising a wavelength conversion layer having indirect bandgap energy and made of an N-type doped AlInGaP material

摘要

Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region is configured to produce a light via electroluminescence. The light emitting device also includes a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlGaInP) doped with an N-type dopant.

主权项

1. A light emitting device, comprising:
a first semiconductor material; a second semiconductor material spaced apart from the first semiconductor material; an active region between the first and second semiconductor materials, the active region being configured to produce a light via electroluminescence; and a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlInGaP) having a direct bandgap energy and an indirect bandgap energy that is equal to or lower than the direct bandgap energy, wherein the conversion material is doped with an N-type dopant.