| 摘要 |
<p>The present invention provides a thermochemical vapor deposition apparatus capable of growing high-grade nanorods. According to the present invention, the inner space of a reaction chamber is separated into a growth area, on which a substrate is mounted, and a vaporization area which vaporizes a source material; the temperature of the growth area is controlled to be relatively low and the temperature of the vaporization area is controlled to be relatively high; a reaction product from vaporized source material is formed at high temperatures and then grows to nanorods by vapor deposition on the substrate with the low temperature; and thereby the nanorods having a mono-crystal structure can be obtained without damaging the substrate.</p> |
