Method of forming semiconductor device using Si-H rich silicon nitride layer

摘要

A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.

主权项

1. A method of forming a semiconductor device, comprising:
forming an NMOS transistor having a gate electrode on a gate dielectric layer and source/drain regions in a semiconductor substrate; forming a first tensile stress capping nitride layer covering the gate electrode and the source/drain regions of the NMOS transistor, the first tensile stress capping nitride layer including a Si—H rich SiN layer; annealing the semiconductor substrate having the first tensile stress capping nitride layer, such that a thickness of the gate dielectric layer is increased due to the annealing; and removing the first tensile stress capping nitride layer, the method further comprising: forming a second capping nitride layer having an N—H rich SiN layer on the NMOS transistor before forming the first tensile stress capping nitride layer, the second capping nitride layer being directly on the NMOS transistor, and the first tensile stress capping nitride layer being directly on the second capping nitride layer over the NMOS transistor.