发明名称 |
Method for depositing high aspect ratio molecular structures |
摘要 |
A method for depositing high aspect ratio molecular structures (HARMS), which method comprises applying a force upon an aerosol comprising one or more HARM-structures, which force moves one or more HARM-structures based on one or more physical features and/or properties towards one or more predetermined locations for depositing one or more HARM-structures in a pattern by means of an applied force. |
申请公布号 |
US8951602(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US200712281888 |
申请日期 |
2007.03.07 |
申请人 |
Canatu Oy |
发明人 |
Brown David P.;Nasibulin Albert G.;Kauppinen Esko I.;Gonzales David |
分类号 |
B82Y10/00;B82Y30/00;B82Y40/00;C01B31/02;B82B3/00 |
主分类号 |
B82Y10/00 |
代理机构 |
Studebaker & Brackett PC |
代理人 |
Studebaker & Brackett PC |
主权项 |
1. A method for depositing high aspect ratio molecular structures (HARM-structures), wherein the method comprises:
applying a DC-generated electrostatic force upon a gaseous dispersion containing individual and bundled HARM-structures, wherein the bundled HARM-structures are naturally charged and the individual structures are uncharged, moving the naturally charged bundled HARM-structures based on one or more physical features and/or properties towards one or more predetermined locations by means of the applied DC-generated electrostatic force, wherein said moving separates the individual HARM-structures from the bundled HARM-structures, charging the separated individual HARM-structures by passing said separated individual HARM-structures through an electron cloud, applying a second electrostatic force upon the charged individual HARM-structures, and depositing one or more of the charged individual HARM-structures by means of the applied second electrostatic force. |
地址 |
FI |