| 摘要 |
<p>The gallium nitride based diode of the present invention may include an intrinsic gallium nitride based semiconductor layer; a first conductivity-type gallium nitride based semiconductor layer boned to the intrinsic gallium nitride based semiconductor layer; a first electrode of a metallic material located in a side which is opposite to a bonding side with the first conductivity-type gallium nitride based semiconductor layer of the intrinsic gallium nitride based semiconductor layer; a second electrode located in side which is opposite to a bonding side with the intrinsic gallium nitride based semiconductor layer of the first conductivity-type gallium nitride based semiconductor layer; and a second conductivity-type pressure-resistant layer.</p> |
