| 摘要 |
A memory is composed o a storage element 10 having a magnetization fixed layer 3 provided relative to a storage layer 5 through an intermediate layer 4 in which the direction of magnetization of the storage layer 5 is changed with application of an electric current to the storage element 10 in the lamination layer direction to record information on the storage layer 5 and a wiring through which an electric current flows to the lamination layer direction of the storage element 10 , wherein when information is read out from the storage layer 5 , an electric current of the same polarity as that of an electric current to record information in such a manner that an electric resistance of the storage element 10 is changed from the high resistance state to the low resistance state flows through the wiring to the storage element 10.
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