| 发明名称 |
BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND BIPOLAR TRANSISTOR MANUFACTURING METHOD |
| 摘要 |
Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view. |
| 申请公布号 |
US2015035121(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414328737 |
申请日期 |
2014.07.11 |
| 申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
Sasaki Kenji |
| 分类号 |
H01L29/73;H01L29/66 |
主分类号 |
H01L29/73 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bipolar transistor comprising:
a collector layer that has a long-side direction and a short-side direction in a plan view, wherein the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view. |
| 地址 |
Kyoto JP |
