发明名称 |
FLASH MEMORY CELL WITH CAPACITIVE COUPLING BETWEEN A METAL FLOATING GATE AND A METAL CONTROL GATE |
摘要 |
<p>An apparatus includes a storage transistor. The storage transistor includes a floating gate configured to store electrical charge and a control gate. The floating gate is coupled to the control gate via capacitive coupling. The floating gate and the control gate are metal. The apparatus also includes an access transistor coupled to the storage transistor. A gate of the access transistor is coupled to a word line. The storage transistor and the access transistor are serially coupled between a bit line and a source line.</p> |
申请公布号 |
WO2015017158(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
WO2014US47446 |
申请日期 |
2014.07.21 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI, XIA;YANG, BIN;WANG, ZHONGZE |
分类号 |
G11C16/04;H01L21/28;H01L27/115;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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