发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
An electronic device includes a semiconductor memory. The semiconductor memory includes an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction; an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; and resistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines, wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate. |
申请公布号 |
US2015039785(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201314103490 |
申请日期 |
2013.12.11 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK Hae-Chan |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic device comprising:
a semiconductor memory, wherein the semiconductor memory comprises:
an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction;an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; andresistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines,wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate. |
地址 |
Icheon KR |