发明名称 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 An electronic device includes a semiconductor memory. The semiconductor memory includes an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction; an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; and resistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines, wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate.
申请公布号 US2015039785(A1) 申请公布日期 2015.02.05
申请号 US201314103490 申请日期 2013.12.11
申请人 SK HYNIX INC. 发明人 PARK Hae-Chan
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项 1. An electronic device comprising: a semiconductor memory, wherein the semiconductor memory comprises: an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction;an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; andresistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines,wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate.
地址 Icheon KR