| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
A semiconductor light emitting element in which changes in light distribution characteristics due to inclination angle of side surfaces are suppressed. The semiconductor light emitting element includes a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure; and a positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure. Side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface. At least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof. |
| 申请公布号 |
US2015034963(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414447194 |
申请日期 |
2014.07.30 |
| 申请人 |
Nichia Corporation |
发明人 |
Kinouchi Akiyoshi;Hirose Ryohei;Nogami Hirofumi |
| 分类号 |
H01L33/60;H01L33/32;H01L33/40;H01L33/00 |
主分类号 |
H01L33/60 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting element comprising:
a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure; and a positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure; wherein the side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface, and wherein at least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof. |
| 地址 |
Anan-shi JP |
