OXIDE SINTERED BODY, SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high quality and high yield IGZO sputtering target optimal for an oxide semiconductor film use by improving variation in properties of an IGZO thin film and improving generation of cracks during target manufacturing and sputtering which are problems especially for a large-sized sputtering target for oxide semiconductor film.SOLUTION: An oxide sintered body contains at least In, Ga and Zn, and has a homologous crystal structure represented by InGaZnOand an open porosity of 0.2% or less.