| 摘要 |
Provided is a nonvolatile memory device including a resistive memory cell and semiconductor system using the same that is capable of setting the reference resistance value using resistance values of a plurality of memory cells. The nonvolatile memory device comprises one or more column lines, two or more row lines, a plurality of memory cells configured to be connected to the column lines and each of the row lines, and a reference resistance setting unit configured to enable a subset or all of the column lines and row lines and to set a reference resistance value. |
