TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A transistor includes a substrate, a gate structure and impurity regions. The substrate is divided into a field region and an active region by an isolation layer pattern. The field region has the isolation layer pattern thereon, and the active region has no isolation layer pattern thereon. The gate structure includes a central portion and an edge portion. The central portion is on a middle portion of the active region along a first direction and has a first width in a second direction substantially perpendicular to the first direction. The edge portion is on at least one end portion of the active region in the first direction and connected to the central portion and has a second width smaller than the first width in the second direction. The impurity regions are at upper portions of the active region adjacent to both end portions of the gate structure in the second direction.

主权项

1. A transistor, comprising:
a substrate divided into a field region and an active region by an isolation layer pattern, the field region having the isolation layer pattern thereon, and the active region having substantially no isolation layer pattern thereon; a gate structure including a central portion and an edge portion, the central portion being on a middle portion of the active region along a first direction and having a first width in a second direction substantially perpendicular to the first direction, the edge portion being on at least one end portion of the active region in the first direction and connected to the central portion and having a second width smaller than the first width in the second direction; and impurity regions at upper portions of the active region adjacent to both end portions of the gate structure in the second direction.