| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device according to an embodiment includes, a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor layer and above the semiconductor region, the lateral semiconductor element having a first electrode and a second electrode electrically connected to the semiconductor region. |
| 申请公布号 |
US2015034972(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414447892 |
申请日期 |
2014.07.31 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KURAGUCHI Masahiko |
| 分类号 |
H01L29/267;H01L27/12;H01L27/06;H01L29/78;H01L29/861 |
主分类号 |
H01L29/267 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate; a GaN-based semiconductor layer on the semiconductor substrate; and a lateral semiconductor element provided at the GaN-based semiconductor layer and above the semiconductor region, the lateral semiconductor element having a first electrode electrically connected to the semiconductor region, and a second electrode. |
| 地址 |
Minato-ku JP |
