| 摘要 |
The invention relates to a method for producing a microsystem (1) having pixels, comprising the following steps: providing a silicon wafer; producing a thermal silicon oxide layer on the surface of the silicon wafer as a base layer (5) having a thickness between 200 nm and 1000 nm by oxidizing the silicon wafer; producing a thin silicon oxide layer directly on the base layer (5) as a substrate layer (6) having a thickness of 100 nm to 700 nm by means of a thermal deposition method; producing a platinum layer directly on the substrate layer (6) by means of a thermal deposition method, which platinum layer has a thickness of 40 nm to 200 nm, whereby an intermediate product comprising the silicon wafer, the base layer (5), the substrate layer (6), and the platinum layer is produced; cooling the intermediate product to room temperature; structuring the platinum layer in a pixel-like manner by removing superfluous areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in shape of pixels on the substrate layer (5) by the remaining areas of the platinum layer; removing material on the side of the silicon wafer facing away from the base layer (5), such that a frame (3) remains and a membrane (4) formed by the base layer (5) and the substrate layer (6) is tensioned by the frame (3); finishing the microsystem (1). |
