| 摘要 |
<p>This imaging element is provided with a first semiconductor layer and a second semiconductor layer, which are bonded with each other with an insulating layer being interposed therebetween. A region of the second semiconductor layer, said region being around a pixel region where a plurality of pixels are formed, has a signal processing circuit for performing a predetermined processing on a pixel signal outputted from each pixel. Each pixel has a PD, an FD part and a transfer Tr in the first semiconductor layer, and has an amplifier Tr in the second semiconductor layer. Each pixel additionally has a single-layer columnar metal part that penetrates through the upper surface of the insulating layer and electrically connects the FD part and the amplifier Tr with each other. The gate electrode of the transfer Tr is formed on the insulating layer-side surface of the first semiconductor layer. The gate electrode of the amplifier Tr is formed on a surface of the second semiconductor layer, said surface being on the reverse side of the insulating layer-side surface of the second semiconductor layer.</p> |
