SPLIT BIASED RADIO FREQUENCY POWER AMPLIFIER WITH ENHANCED LINEARITY

摘要

A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.

主权项

1. A power amplifier comprising:
a first transistor scaled to operate at a first current density; a second transistor scaled to operate at a second current density, the first transistor coupled with the second transistor; a first power cell comprising a third transistor coupled with the first transistor, the first transistor configured to bias the first power cell; and a second power cell comprising a plurality of transistors coupled with the second transistor, the second transistor configured to bias the second power cell.