| 发明名称 |
METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS |
| 摘要 |
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure. |
| 申请公布号 |
US2015035059(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414520445 |
申请日期 |
2014.10.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON Brent A.;BRYANT Andres;NOWAK Edward J. |
| 分类号 |
H01L29/51;H01L29/78 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
a high-leakage dielectric formed over an active region of a FET; and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric, wherein the low-leakage dielectric has a lower leakage than the high-leakage dielectric. |
| 地址 |
Armonk NY US |
