Split Gate Non-volatile Flash Memory Cell Having A Silicon-Metal Floating Gate And Method Of Making Same

摘要

A non-volatile memory cell includes a substrate of a first conductivity type with first and second spaced apart regions of a second conductivity type, forming a channel region therebetween. A select gate is insulated from and disposed over a first portion of the channel region which is adjacent to the first region. A floating gate is insulated from and disposed over a second portion of the channel region which is adjacent the second region. Metal material is formed in contact with the floating gate. A control gate is insulated from and disposed over the floating gate. An erase gate includes a first portion insulated from and disposed over the second region and is insulated from and disposed laterally adjacent to the floating gate, and a second portion insulated from and laterally adjacent to the control gate and partially extends over and vertically overlaps the floating gate.

主权项

1. A non-volatile memory cell comprising:
a substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type spaced apart from the first region, forming a channel region therebetween; a select gate insulated from and disposed over a first portion of the channel region which is adjacent to the first region; a floating gate insulated from and disposed over a second portion of the channel region which is adjacent the second region; metal material formed in contact with the floating gate; a control gate insulated from and disposed over the floating gate; an erase gate that includes first and second portions, wherein:
the first portion is insulated from and disposed over the second region, and is insulated from and disposed laterally adjacent to the floating gate; andthe second portion is insulated from and laterally adjacent to the control gate, and partially extends over and vertically overlaps the floating gate.