DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.

主权项

1. A liquid crystal display device comprising a pixel, the pixel comprising:
a transistor; and a liquid crystal element electrically connected to the transistor, wherein the transistor comprises:
a gate electrode;a first insulating layer over the gate electrode; aan oxide semiconductor layer over the first insulating layer;a source terminal and a drain terminal over the oxide semiconductor layer; anda second insulating layer over the source terminal and the drain terminal, wherein off current of the transistor is lower than 10 zA/μm at room temperature.