发明名称 SOLID-STATE SWITCHING DEVICE HAVING A HIGH-VOLTAGE SWITCHING TRANSISTOR AND A LOW-VOLTAGE DRIVER TRANSISTOR
摘要 According to an embodiment, a solid-state switching device includes a high-voltage switching transistor including a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal, and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit including a low-voltage driver transistor including a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor.
申请公布号 US2015035586(A1) 申请公布日期 2015.02.05
申请号 US201313957864 申请日期 2013.08.02
申请人 Infineon Technologies Dresden GmbH 发明人 Weis Rolf;Sanders Anthony
分类号 H03K17/08 主分类号 H03K17/08
代理机构 代理人
主权项 1. A solid-state switching device, comprising: a high-voltage switching transistor comprising a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal; and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit comprising a low-voltage driver transistor comprising a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor.
地址 Dresden DE