发明名称 |
SOLID-STATE SWITCHING DEVICE HAVING A HIGH-VOLTAGE SWITCHING TRANSISTOR AND A LOW-VOLTAGE DRIVER TRANSISTOR |
摘要 |
According to an embodiment, a solid-state switching device includes a high-voltage switching transistor including a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal, and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit including a low-voltage driver transistor including a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor. |
申请公布号 |
US2015035586(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201313957864 |
申请日期 |
2013.08.02 |
申请人 |
Infineon Technologies Dresden GmbH |
发明人 |
Weis Rolf;Sanders Anthony |
分类号 |
H03K17/08 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state switching device, comprising:
a high-voltage switching transistor comprising a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal; and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit comprising a low-voltage driver transistor comprising a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor. |
地址 |
Dresden DE |