| 摘要 |
<p>An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10 17 cm -3 , wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm -2 . In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10 -2 cm 2 or at least 1×10 -3 cm 2 .</p> |
