发明名称 |
NONVOLATILE MEMORY PROGRAMMING WITH STRING SELECT TRANSISTOR DIFFUSION REGION VOLTAGE DEPENDENT ON LOCATION OF SELECTED WORD LINE |
摘要 |
Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction. |
申请公布号 |
EP2831883(A1) |
申请公布日期 |
2015.02.04 |
申请号 |
EP20120798122 |
申请日期 |
2012.11.27 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
LAI, CHUN-HUNG;SATO, SHINJI;LEE, SHIH-CHUNG;HEMINK, GERRIT JAN |
分类号 |
G11C11/56;G11C16/04;G11C16/10;G11C29/02;G11C29/12 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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